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www.irf.com 1 09/19/06 IRF7835UPBF hexfet power mosfet notes through are on page 9 benefits very low q rr very low r ds(on) at 4.5v v gs ultra-low gate impedance fully characterized avalanche voltage and current 20v v gs max. gate rating lead-free applications synchronous mosfet for notebookprocessor power synchronous rectifier mosfet forisolated dc-dc converters in networking systems top view 8 12 3 4 5 6 7 d d d d g s a s s a so-8 v dss r ds(on) max qg 30v 4.5m @v gs = 10v 22nc absolute maximum ratings parameter units v ds drain-to-source voltage v v gs gate-to-source voltage i d @ t a = 25c continuous drain current, v gs @ 10v i d @ t a = 70c continuous drain current, v gs @ 10v a i dm pulsed drain current p d @t a = 25c power dissipation w p d @t a = 70c power dissipation linear derating factor w/c t j operating junction and c t stg storage temperature range thermal resistance parameter typ. max. units r jl junction-to-drain lead CCC 20 c/w r ja junction-to-ambient CCC 50 max. 1915 150 20 30 -55 to + 155 2.5 0.02 1.6 downloaded from: http:///

2 www.irf.com s d g static @ t j = 25c (unless otherwise specified) parameter min. typ. max. units bv dss drain-to-source breakdown voltage 30 CCC CCC v ? v dss / ? t j breakdown voltage temp. coefficient CCC 0.023 CCC v/c r ds(on) static drain-to-source on-resistance CCC 3.6 4.5 m ? CCC 4.5 5.7 v gs(th) gate threshold voltage 1.35 1.8 2.35 v ? v gs(th) gate threshold voltage coefficient CCC -6.0 CCC mv/c i dss drain-to-source leakage current CCC CCC 1.0 a CCC CCC 150 i gss gate-to-source forward leakage CCC CCC 100 na gate-to-source reverse leakage CCC CCC -100 gfs forward transconductance 81 CCC CCC s q g total gate charge CCC 22 33 q gs1 pre-vth gate-to-source charge CCC 5.5 CCC q gs2 post-vth gate-to-source charge CCC 2.1 CCC nc q gd gate-to-drain charge CCC 7.2 CCC q godr gate charge overdrive CCC 7.2 CCC see fig. 16 q sw switch charge (q gs2 + q gd ) CCC 9.3 CCC q oss output charge CCC 14 CCC nc r g gate resistance CCC 1.0 1.7 ? t d(on) turn-on delay time CCC 9.6 CCC t r rise time CCC 13 CCC t d ( off ) turn-off delay time CCC 14 CCC ns t f fall time CCC 4.6 CCC c iss input capacitance CCC 2960 CCC c oss output capacitance CCC 610 CCC pf c rss reverse transfer capacitance CCC 270 CCC avalanche characteristics parameter units e as single pulse avalanche energy mj i ar avalanche current a diode characteristics parameter min. typ. max. units i s continuous source current CCC CCC 3.1 (body diode) a i sm pulsed source current CCC CCC 150 (body diode) v sd diode forward voltage CCC CCC 1.0 v t rr reverse recovery time CCC 16 24 ns q rr reverse recovery charge CCC 21 32 nc t on forward turn-on time intrinsic turn-on time is negligible (turn-on is dominated by ls+ld ) CCC i d = 15a v gs = 0v v ds = 15v v gs = 4.5v, i d = 15a v gs = 4.5v typ. CCC v ds = v gs , i d = 50a clamped inductive load v ds = 15v, i d = 15a v ds = 24v, v gs = 0v, t j = 125c t j = 25c, i f = 15a, v dd = 15v di/dt = 320a/s t j = 25c, i s = 15a, v gs = 0v showing the integral reverse p-n junction diode. mosfet symbol v ds = 16v, v gs = 0v v dd = 15v, v gs = 4.5v i d = 15a v ds = 15v v gs = 20v v gs = -20v v ds = 24v, v gs = 0v conditions v gs = 0v, i d = 250a reference to 25c, i d = 1ma v gs = 10v, i d = 19a conditions max. 240 15 ? = 1.0mhz downloaded from: http:///

www.irf.com 3 fig 4. normalized on-resistance vs. temperature fig 2. typical output characteristics fig 1. typical output characteristics fig 3. typical transfer characteristics 0.1 1 10 100 v ds , drain-to-source voltage (v) 0.01 0.1 1 10 100 1000 i d , d r a i n - t o - s o u r c e c u r r e n t ( a ) 60s pulse width tj = 25c 2.3v vgs top 10v 5.0v 4.5v 3.5v 3.0v 2.7v 2.5v bottom 2.3v 0.1 1 10 100 v ds , drain-to-source voltage (v) 1 10 100 1000 i d , d r a i n - t o - s o u r c e c u r r e n t ( a ) 60s pulse width tj = 150c 2.3v vgs top 10v 5.0v 4.5v 3.5v 3.0v 2.7v 2.5v bottom 2.3v -60 -40 -20 0 20 40 60 80 100 120 140 160 t j , junction temperature (c) 0.5 1.0 1.5 2.0 r d s ( o n ) , d r a i n - t o - s o u r c e o n r e s i s t a n c e ( n o r m a l i z e d ) i d = 15a v gs = 10v 1.0 2.0 3.0 4.0 5.0 v gs , gate-to-source voltage (v) 0.01 0.1 1 10 100 1000 i d , d r a i n - t o - s o u r c e c u r r e n t ( a ) v ds = 15v 60s pulse width t j = 25c t j = 150c downloaded from: http:///

4 www.irf.com fig 8. maximum safe operating area fig 6. typical gate charge vs. gate-to-source voltage fig 5. typical capacitance vs. drain-to-source voltage fig 7. typical source-drain diode forward voltage 0.2 0.4 0.6 0.8 1.0 1.2 v sd , source-to-drain voltage (v) 0.1 1 10 100 1000 i s d , r e v e r s e d r a i n c u r r e n t ( a ) t j = 25c t j = 150c v gs = 0v 1 10 100 v ds , drain-to-source voltage (v) 100 1000 10000 100000 c , c a p a c i t a n c e ( p f ) coss crss ciss v gs = 0v, f = 1 mhz c iss = c gs + c gd , c ds shorted c rss = c gd c oss = c ds + c gd 0.01 0.1 1 10 100 v ds , drain-to-source voltage (v) 0.01 0.1 1 10 100 1000 i d , d r a i n - t o - s o u r c e c u r r e n t ( a ) t a = 25c tj = 150c single pulse 1msec 10msec operation in this area limited by r ds (on) 100sec 100msec 0 1 02 03 04 05 06 0 q g , total gate charge (nc) 0 2 4 6 8 10 12 v g s , g a t e - t o - s o u r c e v o l t a g e ( v ) v ds = 25v vds= 16v vds= 7.6v i d = 15a downloaded from: http:///

www.irf.com 5 1e-006 1e-005 0.0001 0.001 0.01 0.1 1 10 100 t 1 , rectangular pulse duration (sec) 0.0001 0.001 0.01 0.1 1 10 100 t h e r m a l r e s p o n s e ( z t h j a ) 0.20 0.10 d = 0.50 0.02 0.01 0.05 single pulse ( thermal response ) notes: 1. duty factor d = t1/t2 2. peak tj = p dm x zthja + tc fig 11. maximum effective transient thermal impedance, junction-to-ambient fig 9. maximum drain current vs. case temperature fig 10. threshold voltage vs. temperature -75 -50 -25 0 25 50 75 100 125 150 t j , temperature ( c ) 0.8 1.0 1.2 1.4 1.6 1.8 2.0 2.2 v g s ( t h ) g a t e t h r e s h o l d v o l t a g e ( v ) i d = 50a 25 50 75 100 125 150 t c , casetemperature (c) 0 4 8 12 16 20 i d , d r a i n c u r r e n t ( a ) ri (c/w) ? (sec) 5.599447 0.010553 27.35936 1.1984 17.0458 44.7 j j 1 1 2 2 3 3 r 1 r 1 r 2 r 2 r 3 r 3 c ci= i / ri ci= i / ri downloaded from: http:///

6 www.irf.com fig 13. maximum avalanche energy vs. drain current fig 12. on-resistance vs. gate voltage 25 50 75 100 125 150 starting t j , junction temperature (c) 0 100 200 300 400 500 e a s , s i n g l e p u l s e a v a l a n c h e e n e r g y ( m j ) i d top 1.4a 1.8a bottom 15a 2.0 4.0 6.0 8.0 10.0 v gs , gate-to-source voltage (v) 0 4 8 12 16 r d s ( o n ) , d r a i n - t o - s o u r c e o n r e s i s t a n c e ( m ? ) t j = 25c t j = 125c i d = 15a fig 15b. switching time waveforms v gs v ds 90% 10% t d(on) t d(off) t r t f fig 14b. unclamped inductive waveforms fig 14a. unclamped inductive test circuit t p v (br)dss i as r g i as 0.01 ? t p d.u.t l v ds + - v dd driver a 15v 20v v gs fig 15a. switching time test circuit v gs pulse width < 1s duty factor < 0.1% v dd v ds l d d.u.t + - downloaded from: http:///

www.irf.com 7 d.u.t. v ds i d i g 3ma v gs .3 f 50k ? .2 f 12v current regulator same type as d.u.t. current sampling resistors + - fig 16a. gate charge test circuit fig 16b. gate charge waveform vds vgs id vgs(th) qgs1 qgs2 qgd qgodr fig 17.

for n-channel hexfet power mosfets
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? ? p.w. period di/dt diode recovery dv/dt ripple 5% body diode forward drop re-appliedvoltage reverserecovery current body diode forward current v gs =10v v dd i sd driver gate drive d.u.t. i sd waveform d.u.t. v ds waveform inductor curent d = p. w . period

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8 www.irf.com so-8 package outlinedimensions are shown in millimeters (inches) so-8 part marking e1 de y b aa1 h k l .189 .1497 0 .013 .050 basic .0532 .0040 .2284 .0099 .016 .1968 .1574 8 .020 .0688 .0098 .2440 .0196 .050 4.80 3.80 0.33 1.35 0.10 5.80 0.25 0.40 0 1.27 bas ic 5.00 4.00 0.51 1.75 0.25 6.20 0.50 1.27 mi n max millimeters inches min max dim 8 e c .0075 .0098 0.19 0.25 .025 basic 0.635 basic 87 5 65 d b e a e 6x h 0.25 [.010] a 6 7 k x 45 8x l 8x c y 0.25 [.010] c a b e1 a a1 8x b c 0.10 [.004] 4 3 12 f oot p r i nt 8x 0.72 [.028] 6.46 [.255] 3x 1.27 [.050] 4. ou t l i ne conf or ms t o j e de c ou t l i ne ms - 012 aa. not e s : 1. dimens ioning & tolerancing per asme y14.5m-1994. 2. cont rol l ing dime ns ion: mil l ime t e r 3. dime ns ions are s hown in mil l ime t e rs [inche s ]. 5 dime ns ion doe s not incl u de mol d pr ot ru s ions . 6 dime ns ion doe s not incl u de mol d pr ot ru s ions . mold protrus ions not to exceed 0.25 [.010]. 7 dimens ion is t he lengt h of lead for soldering to a s ubst rat e. mold protrus ions not to exceed 0.15 [.006]. 8x 1.78 [.070] downloaded from: http:///

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repetitive rating; pulse width limited by max. junction temperature. starting t j = 25c, l = 2.1mh, r g = 25 ? , i as = 15a. pulse width 400s; duty cycle 2%. when mounted on 1 inch square copper board. r is measured at t j of approximately 90 c. data and specifications subject to change without notice. this product has been designed and qualified for the consumer market. qualification standards can be found on irs web site. ir world headquarters: 233 kansas st., el segundo, california 90245, usa tel: (310) 252-7105 tac fax: (310) 252-7903 visit us at www.irf.com for sales contact information . 09/2006 330.00 (12.992) max. 14.40 ( .566 ) 12.40 ( .488 ) notes : 1. controlling dimension : millimeter. 2. outline conforms to eia-481 & eia-541. feed direction terminal number 1 12.3 ( .484 ) 11.7 ( .461 ) 8.1 ( .318 ) 7.9 ( .312 ) notes: 1. controlling dimension : millimeter. 2. all dimensions are shown in millimeters(inches). 3. outline conforms to eia-481 & eia-541. so-8 tape and reeldimensions are shown in milimeters (inches) downloaded from: http:///

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